Textured surface boron-doped zinc oxide (BZO) thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide (TCO) for solar cells. The surface microstructure was characterized by X-ray diffraction spectrum and scanning electron microscope. The optical transmittance was shown by optical transmittance microscope and the electrical properties were tested by Hall measurements. The thickness of the BZO film has crucial impact on the surface morphology, optical transmittance, and resistivity. The electrical and optical properties as well as surface microstructure varied inconsistently with the increase of the film thickness. The grain size and the surface roughness increased with the increase of the film thickness. The conductivity increased from 0.96×10³ to 6.94×10³ S/cm while the optical transmittance decreased from above 85% to nearly 80% with the increase of film thickness from 195 to 1021 nm. The BZO films deposited as both front and back transparent electrodes were applied to the bifacial ptype a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n⁺-type a-Si:H heterojunction solar cells to obtain the optimized parameter of thickness. The highest efficiency of all the samples was 17.8% obtained with the BZO film thickness of 829 nm. Meanwhile, the fill factor was 0.676, the opencircuit voltage was 0.63 Vand the short-circuit density was 41.79 mA/cm². The properties of the solar cells changing with the thickness were also investigated.

In this paper, ATLAS 2D device simulator of SILVACO was used for device simulation of invertedstaggered thin film transistor using amorphous indium gallium zinc oxide as active layer (a-IGZO-TFT) with double active layers, based on the density of states (DOS) model of amorphous material. The change of device performance induced by the thickness variation of each active layer was studied, and the interface between double active layers was analyzed. The best performance was found when the interface was near the edge of the channel, by optimizing the thickness of each active layers, the high performance device of threshold voltage (V_th) = – 0.89 V, sub-threshold swing (SS)= 0.27, on/off current ratio (ION/IOFF) = 6.98 × 10¹⁴ was obtained.

由于单独使用数字算法会导致灰度级降低, 而单独使用模拟算法难以实现微调或者电路过于复杂, 文章采用数模结合的方法实现了AM-OLED的白平衡, 即通过先后进行模拟调节和数字调节, 弥补了二者的不足。先根据三基色确定驱动电压, 完成了模拟调节。再进行数字调节, 采用了基于L-M优化法的BP学习算法, 对OLED的传输特性曲线进行拟合。该算法与传统BP算法相比学习速度得到了提高, 网络的收敛加快, 避免了系统陷入局部极小的状况。仿真结果和显示结果表明, 这种方法实现了图像的白平衡。

利用现场可编程门阵列结合液晶显示器(LCD)的驱动芯片研制了一个17.8 cm(7 in)彩色AMOLED显示模块。用Verilog硬件描述语言编写了显示驱动控制程序。通过对OLED显示屏的研究，选择了适合该显示屏的LCD驱动芯片。通过研究LCD驱动芯片的特性，结合驱动OLED的实际需求，提出了一种屏幕与IC的连接方案。采用奇偶列像素数据线交错排列、列驱动IC并行工作的方法，克服了LCD驱动芯片点反转导致屏幕亮度损失一半的问题。针对数据驱动IC只能接收6 bit/pixel的数据，而丢失了2 bit数据的问题，文章在图像处理中引入了数字半调技术，利用Bayer抖动法对输入数据进行处理，提高了输出图像的质量。

为研制中的分辨率为640×RGB×480的有源矩阵有机发光显示器(AMOLED)设计了图像缩放和时序控制方案。为了达到良好的显示效果且同时节省硬件资源，水平缩放采用基于边缘的插值算法，垂直缩放采用双线性插值算法；此外，利用图像缩小后产生的“行空白”时间增加写屏时间，避免了片外存储器的使用。FPGA验证结果表明，该方案可以实现64级灰度的VGA AMOLED的动态视频显示。

介绍了一种基于FPGA的驱动方案，为所研制的基于微晶硅TFT基板的17.8 cm(7 in)有源矩阵有机发光显示器(AMOLED)提供驱动。该驱动方案实现简单，无需外部缓存，降低了电路布线和系统控制的难度。另外，提出了一种屏幕与IC的连接方案，解决了LCD驱动IC与AMOLED不匹配问题。详细介绍了系统组成及FPGA内部各模块工作原理，给出了时序及控制信号仿真图及示波器的实测结果。结果表明，该设计方案可实现64级灰度的AMOLED动态视频显示。